Electrical characteristics – Diodes ZXMP4A57E6 User Manual
Page 4
ZXMP4A57E6
Document Number DS35238 Rev. 1 - 2
4 of 8
July 2013
© Diodes Incorporated
ZXMP4A57E6
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
-40
V
I
D
= -250µA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
-0.5 µA
V
DS
= -40V, V
GS
= 0V
Gate-Source Leakage
I
GSS
100
nA
V
GS
=
20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
-1.0
-3.0 V
I
D
= -250µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 9)
R
DS(ON)
0.080
Ω
V
GS
= -10V, I
D
= -4A
0.150
V
GS
= -4.5V, I
D
= -2A
Forward Transconductance (Notes 9 & 10)
g
fs
7.6
S
V
DS
= -15V, I
D
= -4A
Diode Forward Voltage (Note 9)
V
SD
-0.86 -0.95 V I
S
= -4A, V
GS
= 0V
Reverse recovery time (Note 10)
t
rr
17.4
ns
I
S
= -1.8A, di/dt = 100A/µs
Reverse recovery charge (Note 10)
Q
rr
11.1
nC
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
833
pF
V
DS
= -20V, V
GS
= 0V
f = 1MHz
Output Capacitance
C
oss
122
Reverse Transfer Capacitance
C
rss
78
Total Gate Charge (Note 11)
Q
g
7
nC
V
GS
= -4.5V
V
DS
= -20V
I
D
= -4A
Total Gate Charge (Note 11)
Q
g
15.8
V
GS
= -10V
Gate-Source Charge (Note 11)
Q
gs
3.6
Gate-Drain Charge (Note 11)
Q
gd
2.7
Turn-On Delay Time (Note 11)
t
D(on)
2.5
ns
V
DD
= -20V, V
GS
= -10V
I
D
= -1A, R
G
6.0
Turn-On Rise Time (Note 11)
t
r
3.3
Turn-Off Delay Time (Note 11)
t
D(off)
47
Turn-Off Fall Time (Note 11)
t
f
21
Notes:
9. Measured under pulsed conditions. Pulse width
300µs; duty cycle 2%.
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.