Diodes ZXMP4A57E6 - Manual (Page 2)

ZXMP4A57E6
Document Number DS35238 Rev. 1 - 2
2 of 8
www.diodes.com
July 2013
© Diodes Incorporated
ZXMP4A57E6
ADVAN
CE I
N
F
O
RM
ATI
O
N
A Product Line of
Diodes Incorporated
Maximum Ratings
(@T A = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V DSS
-40 V
Gate-Source Voltage V
GS
20 V
Continuous Drain Current V
GS
= 10V
(Note 7)
I
D
-3.7
A T
A
= +70°C (Note 7) -2.9
(Note 6) -2.9
Pulsed Drain current V
GS
= 10V (Note 8) I
DM
-18 A
Continuous Source Current (Body Diode) (Note 7) I S
-2.6 A
Pulsed Source Current (Body Diode) (Note 8) I
SM
-18 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Note 6)
P
D
1.1
8.8
W
mW/°C
(Note 7)
1.7
13.7
Thermal Resistance, Junction to Ambient
(Note 6)
R θJA
113
°C/W
(Note 7) 73
Operating and storage temperature range T
J
, T
STG
-55 to +150 °C
Notes: 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as note (4), except the device is measured at t
 5 sec.
8. Same as note (4), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.