Diodes ZXMP3A16DN8 - Manual (Page 4)

ZXMP3A16DN8
ISSUE 2 - MAY 2007
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
-30 V I
D
=-250 μA, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
-1.0 ␮A V
DS
=-30V, V
GS
=0V
Gate-Body Leakage I
GSS
100 nA V
GS
= Ϯ20V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th)
-1.0 V I
D
=-250 ␮A,
V
DS
= V
GS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
0.045
0.070
⍀
⍀ V
GS
=-10V, I
D
=-4.2A
V
GS
=-4.5V, I
D
=-3.4A
Forward Transconductance
(1)(3)
g
fs
9.2 S V
DS
=-15V,I
D
=-4.2A
DYNAMIC
(3)
Input Capacitance C
iss
1022 pF
V
DS
=-15 V, V
GS
=0V,
f=1MHz
Output Capacitance C
oss
267 pF
Reverse Transfer Capacitance C
rss
229 pF
SWITCHING
(2) (3)
Turn-On Delay Time t
d(on)
3.8 ns
V
DD
=-15V, I
D
=-1A
R
G
=6.0 Ω, V
GS
=-10V
Rise Time t
r
6.5 ns
Turn-Off Delay Time t
d(off)
37.1 ns
Fall Time t
f
21.4 ns
Gate Charge Q
g
17.2 nC V
DS
=-15V,V
GS
=-5V,
I
D
=-4.2A
Total Gate Charge Q
g
29.6 nC
V
DS
=-15V,V
GS
=-10V,
I
D
=-4.2A
Gate-Source Charge Q
gs
2.8 nC
Gate-Drain Charge Q
gd
8.6 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
-0.85 -0.95 V T
J
=25°C, I
S
=-3.6A,
V
GS
=0V
Reverse Recovery Time (3) t
rr
21.7 ns T
J
=25°C, I
F
=-2A,
di/dt= 100A/ μs
Reverse Recovery Charge (3) Q
rr
16.1 nC
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Width ≤300μs. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.