Diodes ZXMP3A16DN8 - Manual (Page 2)

ZXMP3A16DN8
ISSUE 2 - MAY 2007
2
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient
(a)(d)
R θJA 100 °C/W
Junction to Ambient (b)(e) R θJA 70 °C/W
Junction to Ambient
(b)(d)
R θJA 60 °C/W
THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t Յ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with 2 active die running at equal power.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DSS
-30 V
Gate-Source Voltage V
GS
Ϯ20 V
Continuous Drain Current@V
GS
=10V; T
A
=25 ЊC (b)(d)
@V
GS
=10V; T
A
=70 ЊC (b)(d)
@V
GS
=10V; T
A
=25 ЊC (a)(d)
I
D
-5.5
-4.4
-4.2 A
A
A
Pulsed Drain Current (c) I
DM
-20 A
Continuous Source Current (Body Diode)
(b)
I
S
-3.2 A
Pulsed Source Current (Body Diode) (c) I
SM
-20 A
Power Dissipation at T
A
=25°C (a)(d)
Linear Derating Factor
P
D
1.25
10
W
mW/°C
Power Dissipation at T
A
=25°C
(a)(e)
Linear Derating Factor
P
D
1.8
14
W
mW/°C
Power Dissipation at T
A
=25°C (b)(d)
Linear Derating Factor
P
D
2.1
17
W
mW/°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ABSOLUTE MAXIMUM RATINGS