Diodes ZXMD63P03X - Manual (Page 4)

ZXMD63P03X
S E M I C O N D U C T O R S
ISSUE 1 - OCTOBER 2005
4
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
-30 V I
D
=-250 µA, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
-1 µA V
DS
=-30V, V
GS
=0V
Gate-Body Leakage I
GSS
Ϯ100 nA V
GS
= Ϯ20V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th)
-1.0 V I
D
=-250 µA, V
DS
=V
GS
Static Drain-Source On-State Resistance (1) R
DS(on)
0.185
0.27
Ω
Ω
V
GS
=-10V, I
D
=-1.2A
V
GS
=-4.5V, I
D
=-0.6A
Forward Transconductance (3) g
fs
0.92 S V
DS
=-10V,I
D
=-0.6A
DYNAMIC (3)
Input Capacitance C
iss
270 pF
V
DS
=-25 V, V
GS
=0V,
f=1MHz Output Capacitance C
oss
80 pF
Reverse Transfer Capacitance C
rss
30 pF
SWITCHING (2) (3)
Turn-On Delay Time t
d(on)
2.6 ns
V
DD
=-15V, I
D
=-1.2A
R
G
=6.2 Ω, R
D
=6.2 Ω
(Refer to test
circuit)
Rise Time t
r
4.8 ns
Turn-Off Delay Time t
d(off)
13.1 ns
Fall Time t
f
9.3 ns
Total Gate Charge Q
g
7 nC
V
DS
=-24V,V
GS
=-10V,
I
D
=-1.2A
(Refer to test
circuit)
Gate-Source Charge Q
gs
1.2 nC
Gate Drain Charge Q
gd
2 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
SD
-0.95 V T
j
=25°C, I
S
=-1.2A,
V
GS
=0V
Reverse Recovery Time (3) t
rr
21.4 ns T
j
=25°C, I
F
=-1.2A,
di/dt= 100A/ µs
Reverse Recovery Charge(3) Q
rr
15.7 nC
NOTES:
(1) Measured under pulsed conditions. Width=300 µs. Duty cycle ®2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.