Diodes ZXMD63P03X - Manual (Page 2)

ZXMD63P03X
S E M I C O N D U C T O R S
ISSUE 1 - OCTOBER 2005
2
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a)(d) R θJA 143 °C/W
Junction to Ambient (b)(d) R θJA 100 °C/W
Junction to Ambient (a)(e) R θJA 120 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t р10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL P-CHANNEL UNIT
Drain-Source Voltage V
DSS
-30 V
Gate- Source Voltage V
GS
Ϯ20 V
Continuous Drain Current
(V
GS
=4.5V; T
A
=25°C)(b)(d)
(V
GS
=4.5V; T
A
=70°C)(b)(d)
I
D
2.0
1.6 A
A
Pulsed Drain Current (c)(d) I
DM
-9.6 A
Continuous Source Current (Body Diode)(b)(d) I
S
-1.4 A
Pulsed Source Current (Body Diode)(c)(d) I
SM
-9.6 A
Power Dissipation at T
A
=25°C (a)(d)
Linear Derating Factor
P
D
0.87
6.9
W
mW/°C
Power Dissipation at T
A
=25°C (a)(e)
Linear Derating Factor
P
D
1.04
8.3
W
mW/°C
Power Dissipation at T
A
=25°C (b)(d)
Linear Derating Factor
P
D
1.25
10
W
mW/°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C