Diodes ZXM66P03N8 - Manual (Page 3)

ZXM66P03N8
S E M I C O N D U C T O R S
ISSUE 1 - JANUARY 2006
3
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown Voltage V(BR)DSS -30 V ID=-250µA, VGS=0V
Zero Gate Voltage Drain Current IDSS -1 µA VDS=-24V, VGS=0V
Gate-Body Leakage IGSS -100 nA VGS=±20V, VDS=0V
Gate-Source Threshold Voltage VGS(th) -1.0 V I
D
=-250 µA, VDS=
VGS
Static Drain-Source On-State
Resistance (1) RDS(on) 0.025
0.035 Ω
Ω
VGS=-10V, ID=-5.6A
VGS=-4.5V, ID=-2.8A
Forward Transconductance (1)(3) gfs 14.4 S VDS=-15V,ID=-5.6A
DYNAMIC (3)
Input Capacitance Ciss 1979 pF
VDS=-25 V, VGS=0V,
f=1MHz Output Capacitance Coss 743 pF
Reverse Transfer Capacitance Crss 279 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 7.6 ns
VDD =-15V, ID=-5.6A
RG=6.2Ω, VGS=-10V
Rise Time tr 16.3 ns
Turn-Off Delay Time td(off) 94.6 ns
Fall Time tf 39.6 ns
Gate Charge Qg 36 nC VDS=-15V,VGS=-5V
I
D
=-5.6A
Total Gate Charge Qg 62.5 nC
VDS=-15V,VGS=-10V
I
D
=-5.6A
Gate-Source Charge Qgs 4.9 nC
Gate Drain Charge Qgd 19.6 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD -0.95 V Tj=25°C, IS=-5.6A,
VGS=0V
Reverse Recovery Time (3) trr 35 ns Tj=25°C, IF=-5.6A,
di/dt= 100A/ µs
Reverse Recovery Charge(3) Qrr 39.9 nC
(1) Measured under pulsed conditions. Width=300 µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.