Diodes ZXM66P03N8 - Manual (Page 2)

ZXM66P03N8
S E M I C O N D U C T O R S
ISSUE 1 - JANUARY 2006
2
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) RθJA 80 °C/W
Junction to Ambient (b) RθJA 50 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t р10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 ␮s - pulse width limited by maximum junction temperature.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS -30 V
Gate- Source Voltage VGS ±20 V
Continuous Drain Current VGS=-10V; TA=25°C(b)
VGS=-10V; TA=70°C(b)
VGS=-10V; TA=25°C(a)
ID -7.9
-6.3
-6.25
A
Pulsed Drain Current (c) IDM -28 A
Continuous Source Current (Body Diode)(b) IS -4.1 A
Pulsed Source Current (Body Diode)(c) ISM -28 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor
PD 1.56
12.5 W
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor
PD 2.5
20
W
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C