Diodes ZXM66P02N8 - Manual (Page 2)

ZXM66P02N8
Document Number DS31965 Rev. 2 - 2
2 of 5
www.diodes.com
October 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXM66P02N8
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source voltage V DSS
-20 V
Gate-Source voltage V
GS
±12 V
Continuous Drain current V
GS
= 4.5V
(Note 3)
I
D
-8.0
A T
A
= 70°C (Note 3) -6.5
(Note 2) -6.4
Pulsed Drain current (Note 4) I
DM
-28 A
Continuous Source current (Body diode) (Note 3) I
S
-4.15 A
Pulsed Source current (Body diode) (Note 4) I
SM
-28 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power dissipation
Linear derating factor
(Note 2)
P
D
1.56
12.5
W
mW/
°C
(Note 3)
2.5
20
Thermal Resistance, Junction to Ambient
(Note 2)
R θJA
80
°C/W
(Note 3) 50
Operating and storage temperature range T
J
, T
STG
-55 to 150 °C
Notes:
2. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
3. Same as note (3), except the device is measured at t
≤ 10 sec.
4. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 μs – pulse width limited by maximum junction temperature.
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage BV DSS
-20 ⎯ ⎯ V I
D
= -250 μA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
⎯ ⎯ -1 μA
V
DS
= -16V, V
GS
= 0V
Gate-Source Leakage I
GSS
⎯ ⎯ -100 nA V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage V
GS(th)
-0.7 ⎯ ⎯ V I
D
= -250 μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 5) R
DS (ON)
⎯ ⎯
0.025
Ω
V
GS
= -4.5V, I
D
= -3.2A
0.045 V
GS
= -2.5V, I
D
= -2.7A
Forward Transconductance (Notes 5 & 6) g fs
⎯ 13.3 ⎯ S V DS = -10V, I D = -3.2A
Diode Forward Voltage (Note 5) V
SD
⎯ ⎯ 0.95 V I
S
= -3.2A, V
GS
= 0V
Reverse recovery time (Note 6) t
rr
23.1 ⎯ ns
I F = -3.2A, di/dt = 100A/
μs
Reverse recovery charge (Note 6) Q
rr
⎯ 12.2 ⎯ nC
DYNAMIC CHARACTERISTICS ( Note 6 )
Input Capacitance C iss
⎯ 2068 ⎯ pF
V
DS
= -15V, V
GS
= 0V
F = 1MHz
Output Capacitance C
oss
⎯ 1038 ⎯ pF
Reverse Transfer Capacitance C rss
⎯ 506 ⎯ pF
Total Gate Charge (Note 7) Q
g
⎯ 43.3 ⎯ nC
V GS = -4.5V, V DS = -10V,
I
D
= -3.2A
Gate-Source Charge (Note 7) Q
gs
⎯ 3.5 ⎯ nC
Gate-Drain Charge (Note 7) Q
gd
⎯ 21.3 ⎯ nC
Turn-On Delay Time (Note 7) t
D(on)
⎯ 14.0 ⎯ ns
V
DD
= -10V, V
GS
= -5V
I
D
= -3.2A, R
G
= 6.0
Ω
Turn-On Rise Time (Note 7) t r
⎯ 44.3 ⎯ ns
Turn-Off Delay Time (Note 7) t
D(off)
⎯ 118.4 ⎯ ns
Turn-Off Fall Time (Note 7) t
f
⎯ 98.4 ⎯ ns
Notes: 5. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
6. For design aid only, not subject to production testing.
7. Switching characteristics are independent of operating junction temperatures.