Diodes ZXM66P02N8 User Manual
20v p-channel enhancement mode mosfet, Product summary, Description and applications
ZXM66P02N8
Document Number DS31965 Rev. 2 - 2
1 of 5
October 2009
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXM66P02N8
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
I
D
-20V
0.025
Ω
-8.0A
Description and Applications
This high density MOSFET utilizes a unique structure that combines
the benefits of a low on-resistance with fast switching speed. This
makes it ideal for high efficiency, low voltage power management
applications. Compared to trenchFET technology, this MOSFET
structure has an intrinsically higher pulse current handling capability
in linear mode.
•
Inrush protection circuits
• DC-DC
Converters
•
Power management functions
• Disconnect
switches
• Motor
control
Features and Benefits
•
High pulse current handling in linear mode
• Low
on-resistance
•
Fast switching speed
•
Low gate drive
•
Low profile SOIC package
Mechanical Data
• Case:
SO-8
•
Case Material: Molded Plastic. UL Flammability Classification
Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminals Connections: See diagram below
•
Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.074 grams (approximate)
Ordering Information
(Note 1)
Product
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
ZXM66P02N8TA See
below
7
12
500
Notes:
1. For packaging details, go to our website.
Marking Information
Top View
Equivalent Circuit
ZXM = Product Type Marking Code, Line 1
66P02 = Product Type Marking Code, Line 2
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
ZXM
66P02
YYWW
Top View
SO-8
D
S
G