Diodes ZXM62P02E6 - Manual (Page 4)

4
ZXM62P02E6
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
-20 V I
D
=-250 µ A, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
-1 µ
A V
DS
=-20V, V
GS
=0V
Gate-Body Leakage I
GSS
±
100 nA V
GS
=
±
12V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th)
-0.7 V I
D
=-250 µ A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1) R
DS(on)
0.2
0.375 Ω
Ω
V
GS
=-4.5V, I
D
=-1.6A
V
GS
=-2.7V, I
D
=-0.8A
Forward Transconductance (3) g
fs
1.5 S V
DS
=-10V,I
D
=-0.8A
DYNAMIC (3)
Input Capacitance C
iss
320 pF
V
DS
=-15 V, V
GS
=0V,
f=1MHz Output Capacitance C
oss
150 pF
Reverse Transfer Capacitance C
rss
75 pF
SWITCHING(2) (3)
Turn-On Delay Time t
d(on)
4.1 ns
V
DD
=-10V, I
D
=-1.6A
R
G
=6.0
Ω
, R
D
=6.1
Ω
(Refer to test circuit)
Rise Time t
r
15.4 ns
Turn-Off Delay Time t
d(off)
12.0 ns
Fall Time t
f
19.2 ns
Total Gate Charge Q
g
5.8 nC
V
DS
=-16V,V
GS
=-4.5V,
I
D
=-1.6A
(Refer to test circuit)
Gate-Source Charge Q
gs
1.25 nC
Gate Drain Charge Q
gd
2.8 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
SD
-0.95 V T
j
=25°C, I
S
=-1.6A,
V
GS
=0V
Reverse Recovery Time (3) t
rr
22.5 ns T
j
=25°C, I
F
=-1.6A,
di/dt= 100A/ µ s
Reverse Recovery Charge(3) Q
rr
10.4 nC
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JUNE 2004