Diodes ZXM62P02E6 - Manual (Page 2)

ZXM62P02E6
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R θ JA
113 °C/W
Junction to Ambient (b) R θ JA
73 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t р5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
2
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DSS
-20 V
Gate- Source Voltage V
GS
±
12 V
Continuous Drain Current (V
GS
=-4.5V; T
A
=25°C)(b)
(V
GS
=-4.5V; T
A
=70°C)(b)
I
D
-2.3
-1.7 A
Pulsed Drain Current (c) I
DM
-13 A
Continuous Source Current (Body Diode)(b) I
S
-1.9 A
Pulsed Source Current (Body Diode)(c) I
SM
-13 A
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
P
D
1.1
8.8 W
mW/°C
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
P
D
1.7
13.6
W
mW/°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ISSUE 1 - JUNE 2004