Zxmn10a09k, Maximum ratings, Thermal characteristics – Diodes ZXMN10A09K User Manual
Page 2
ZXMN10A09K
Document Number DS32045 Rev. 7 - 2
2 of 8
January 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ZXMN10A09K
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Drain-Source voltage
V
DSS
100 V
Gate-Source voltage
V
GS
±20
V
Continuous Drain current
V
GS
= 10V
(Note 3)
T
A
= 70
°C (Note 3)
(Note 2)
I
D
7.7
6.2
5.0
A
Pulsed Drain current
V
GS
= 10V
(Note 4)
I
DM
27 A
Continuous Source current (Body diode)
(Note
3)
I
S
11 A
Pulsed Source current (Body diode)
(Note
4)
I
SM
27 A
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Unit
Power dissipation
Linear derating factor
(Note 2)
P
D
4.31
34.4
W
mW/
°C
(Note 3)
10.1
80.8
(Note 6)
2.15
17.2
Thermal Resistance, Junction to Ambient
(Note 2)
R
θJA
29
°C/W
(Note 3)
12.3
(Note 6)
58
Thermal Resistance, Junction to Lead
(Note 5)
R
θJL
1.14
°C/W
Operating and storage temperature range
T
J
, T
STG
-55 to 150
°C
Notes:
2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note 2, except the device is measured at t
≤ 10 sec.
4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with the high coverage single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.