Diodes ZXMN10A08G - Manual (Page 4)

ZXMN10A08G
Issue 1 - June 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown
voltage V
(BR)DSS
100 V I
D
= 250
␮A, V
GS
=0V
Zero gate voltage drain current I
DSS
0.5
␮A
V
DS
= 100V, V
GS
=0V
Gate-body leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
2.0 V I
D
= 250
␮A, V
DS
=V
GS
Static drain-source on-state
resistance
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
␮
s; duty cycle
Յ
2%.
R
DS(on)
0.25
⍀
V
GS
= 10V, I
D
= 3.2A
0.30
⍀
V
GS
= 6V, I
D
= 2.6A
Forward transconductance
(*) (‡)
g fs
5 S V
DS
= 15V, I
D
= 3.2A
Dynamic
(‡)
Input capacitance C
iss
405 pF V
DS
= 50V, V
GS
=0V
f=1MHz
Output capacitance C
oss
28.2 pF
Reverse transfer capacitance C
rss
14.2 pF
Switching
(†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on-delay time t
d(on)
3.4 ns V
DD
= 30V, I
D
= 1.2A
R
G
≅6.0⍀, V
GS
= 10V
Rise time t
r
2.2 ns
Turn-off delay time t
d(off)
8 ns
Fall time t
f
3.2 ns
Gate charge Q
g
4.2 nC V
DS
= 50V, V
GS
= 5V
I
D
= 1.2A
Total gate charge Q
g
7.7 nC V
DS
= 50V, V
GS
= 10V
I
D
= 1.2A
Gate-source charge Q
gs
1.8 nC
Gate drain charge Q
gd
2.1 nC
Source-drain diode
Diode forward voltage
(*) V
SD
0.87 0.95 V T
j
=25°C, I
S
= 3.2A,
V
GS
=0V
Reverse recovery time
(‡) t
rr
27 ns T
j
=25°C, I
S
= 1.2A,
di/dt=100A/ ␮s
Reverse recovery charge
(‡) Q
rr
32 nC