Diodes ZXMN10A08G - Manual (Page 2)

ZXMN10A08G
Issue 1 - June 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t
Յ
10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02,pulse width 300
␮
s - pulse width limited by maximum junction
temperature.
Parameter Symbol Limit Unit
Drain-source voltage V
DSS
100 V
Gate-source voltage V
GS
±20 V
Continuous drain current @ V
GS
= 10V; T
amb
= 25°C
(b) I
D
2.9 A
@ V
GS
= 10V; T
amb
= 70°C
(b) 2.3 A
@ V
GS
= 10V; T
amb
= 25°C
(a) 2.0 A
Pulsed drain current
(c) I
DM
11 A
Continuous source current (body diode)
(b) I
S
5 A
Pulsed source current (body diode)
(c) I
SM
11 A
Power dissipation at T
amb
=25°C
(a) P
D
2 W
Linear derating factor 16 mW/°C
Power dissipation at T
amb
=25°C
(b) P
D
3.9 W
Linear derating factor 31 mW/°C
Operating and storage temperature range T
j
, T
stg
-55 to +150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient
(a) R ⍜JA 62.5 °C/W
Junction to ambient
(b) R
⍜JA
32 °C/W