Diodes ZXMN10A07Z - Manual (Page 3)

ZXMN10A07Z
Document number DS33565 Rev. 7- 2
3 of 7
www.diodes.com
June 2012
© Diodes Incorporated
ADVAN
CE I
N
F
O
RM
ATI
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A Product Line of
Diodes Incorporated
ZXMN10A07Z
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV DSS
100 - - V V GS = 0V, I D = 250 μA
Zero Gate Voltage Drain Current T
J
= 25°C I
DSS
- - 1.0 μA
V
DS
= 100V, V
GS
= 0V
Gate-Source Leakage I
GSS
- - 100 nA V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
2 - 4 V V
DS
= V
GS
, I
D
= 250 μA
Static Drain-Source On-Resistance (Note 9) R
DS (ON)
-
- 700
mΩ
V
GS
= 10V, I
D
= 1.5A
- 900 V GS = 6V, I D = 1A
Forward Transconductance (Note 9 & 11) g
FS
- 1.6 - S V
DS
= 15V, I
D
= 1A
Diodes Forward Voltage (Note 9) V
SD
- 0.85 0.95 V T
J
= 25 °C, I
S
= 1.5A, V
GS
= 0V
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 10 & 11)
C
iss
- 138 - pF
V
DS
= 50V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance (Note 10 & 11) C
oss
- 12 - pF
Reverse Transfer Capacitance (Note 10 & 11) C rss
- 6 - pF
Gate Resistance (Note 10 & 11) R
g
1.8 - 2.6 Ω f = 1MHz, V
GS
= 0V, V
DS
= 0V
Total Gate Charge (Note 10 & 11) Q
g
- 2.9 - nC
V
GS
= 10V, V
DS
= 50V,
I D = 1A
Gate-Source Charge (Note 10 & 11) Q gs
- 0.7 - nC
Gate-Drain Charge (Note 10 & 11) Q
gd
- 1 - nC
Reverse Recovery Time (Note 11) t
rr
27 ns T
J
= 25 °C, I
F
= 1A,
di/dt = 100A/
μs
Reverse Recovery Charge (Note 11) Q
rr
12 nC
Turn-On Delay Time (Note 10 & 11) t
D(on)
- 1.8 - ns
V GS = 10V, V DD = 50V,
R
G
= 6 Ω , I
D
= 1A
Turn-On Rise Time (Note 10 & 11) t
r
- 1.5 - ns
Turn-Off Delay Time (Note 10 & 11) t
D(off)
- 4.1 - ns
Turn-Off Fall Time (Note 10 & 11) t f
- 2.1 - ns
Notes: 9. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤2%.
10. Switching characteristics are independent of operating junction temperature.
11. For design aid only, not subject to production testing.
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