Electrical characteristics – Diodes ZXMN10A08E6 User Manual
Page 3
ZXMN10A08E6
Datasheet Number: DS31909 Rev. 8 – 2
3 of 7
March 2012
© Diodes Incorporated
ZXMN10A08E6
NEW PROD
UC
T
A Product Line of
Diodes Incorporated
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
100
⎯
⎯
V
I
D
= 250
μA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
0.5
μA
V
DS
= 100V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
100 nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
2.0
⎯
4.0 V
I
D
= 250
μA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 8)
R
DS (ON)
⎯
⎯
0.25
Ω
V
GS
= 10V, I
D
= 3.2A
0.30
V
GS
= 6V, I
D
= 2.6A
Forward Transconductance (Notes 8 & 10)
g
fs
⎯
5.0
⎯
S
V
DS
= 15V, I
D
= 3.2A
Diode Forward Voltage (Note 8)
V
SD
⎯
0.87 0.95 V
I
S
= 3.2A, V
GS
= 0V
Reverse recovery time (Note 10)
t
rr
27
⎯
ns
I
S
= 1.2A, di/dt = 100A/
μs
Reverse recovery charge (Note 10)
Q
rr
⎯
32
⎯
nC
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
⎯
405
⎯
pF
V
DS
= 50V, V
GS
= 0V
f = 1MHz
Output Capacitance
C
oss
⎯
28.2
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
14.2
⎯
pF
Gate Charge (Note 9)
Q
g
⎯
4.2
⎯
nC
V
GS
= 5V, V
DS
= 50V
I
D
= 1.2A
Total Gate Charge (Note 9)
Q
g
⎯
7.7
⎯
nC
V
GS
= 10V, V
DS
= 50V
I
D
= 1.2A
Gate-Source Charge (Note 9)
Q
gs
⎯
1.8
⎯
nC
Gate-Drain Charge (Note 9)
Q
gd
⎯
2.1
⎯
nC
Turn-On Delay Time (Note 9)
t
d(on)
⎯
3.4
⎯
ns
V
DD
= 30V, V
GS
= 10V
I
D
= 1.2A, R
G
≅ 6.0Ω
Turn-On Rise Time (Note 9)
t
r
⎯
2.2
⎯
ns
Turn-Off Delay Time (Note 9)
t
d(off)
⎯
8
⎯
ns
Turn-Off Fall Time (Note 9)
t
f
⎯
3.2
⎯
ns
Notes:
8. Measured under pulsed conditions. Width
300μs. Duty cycle 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.