Diodes ZXMN10A08E6 - Manual (Page 2)

ZXMN10A08E6
Datasheet Number: DS31909 Rev. 8 – 2
2 of 7
www.diodes.com
March 2012
© Diodes Incorporated
ZXMN10A08E6
NEW PROD
UC
T
A Product Line of
Diodes Incorporated
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Drain-Source voltage V DSS
100 V
Gate-Source voltage V
GS
±20 V
Continuous Drain current V GS = 10V
Note 5)
I D
1.9
A
T
A
=70
°C (Note 5) 1.5
(Note 4) 1.5
(Note 7) 3.5
Pulsed Drain current (Note 6) I
DM
8.6 A
Continuous Source Current (Body Diode) (Note 5) I
S
2.5 A
Pulsed Source Current (Body Diode) (Note 6) I SM
8.6 A
Thermal Characteristics
@T A = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Power Dissipation
(Note 4)
P
D
1.1
W (Note 5) 1.7
(Note 7) 6.3
Thermal Resistance, Junction to Ambient
(Note 4)
R θJA
114
°C/W
(Note 5) 73.5
Thermal Resistance, Junction to Leads (Note 7) R θJL 19.7 °C/W
Operating and Storage Temperature Range T J , T STG
-55 to +150 °C
Notes: 4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
5. For a device surface mounted on FR4 PCB measured at t
≤ 5 secs.
6. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300µs - pulse width limited by maximum junction temperature.
7. Thermal resistance from junction to solder-point (at the end of the drain lead).
Thermal Characteristics
100m 1 10 100
10m
100m
1
10
V
DS
Drain-Source Voltage (V)
Single Pulse
T
amb
=25°C
R
DS(on)
Limited
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
I C
D
rain C
ur
ren
t (
A
)
0 20 40 60 80 100 120 140 160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Derating Curve
Temperature (°C) Max
P
o
w
e
r
D
is
s
ip
atio
n
(W
)
100µ 1m 10m 100m 1 10 100 1k
20
40
60
80
100
120
T
amb
=25°C
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
T
h
erm
al
Re
s
ist
a
n
ce (°
C/
W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100 Single Pulse
T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s)
Ma
x
imu
m Po
w
e
r (
W
)