Diodes ZVN4210G - Manual

SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 - NOVEMBER 1995
FEATURES
* Low R
DS(on)
= 1.5 Ω
PARTMARKING DETAIL - ZVN4210
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
100 V
Continuous Drain Current at T
amb
=25°C I
D
0.8 A
Pulsed Drain Current I
DM
6 A
Gate-Source Voltage V
GS
± 20 V
Power Dissipation at T
amb
=25°C P
tot
2 W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage BV
DSS
100 V I
D
=1mA, V
GS
=0V
Gate-Source Threshold Voltage V
GS(th)
0.8 2.4 V I
D
=1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
100 nA V
GS
= ± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current I DSS 10
100 µ A
µ A
V DS =100V, V GS =0
V
DS
=80V, V
GS
=0V, T=125°C (2)
On-State Drain Current(1) I
D(on)
2.5 A V
DS
=25V, V
GS
=10V
Static Drain-Source On-State
Resistance (1) R DS(on) 1.5
1.8 Ω
Ω
V GS =10V,I D =1.5A
V
GS
=5V,I
D
=500mA
Forward Transconductance(1)(2) g
fs
250 mS V
DS
=25V,I
D
=1.5A
Input Capacitance (2) C
iss
100 pF
Common Source Output
Capacitance (2) C
oss
40 pF V
DS
=25V, V
GS
=0V, f=1MHz
Reverse Transfer Capacitance (2) C
rss
12 pF
Turn-On Delay Time (2)(3) t
d(on)
4 ns
V
DD
≈ 25V, I
D
=1.5A
Rise Time (2)(3) t
r
8 ns
Turn-Off Delay Time (2)(3) t
d(off)
20 ns
Fall Time (2)(3) t
f
30 ns
(1) Measured under pulsed conditions. Width=300 µ s. Duty cycle ≤ 2% (2) Sample test.
(3) Switching times measured with 50 Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
ZVN4210G
On-resistance v drain current
I D- Drain Current (Amps)
RDS(on)-Drain Source On Resistance
(
Ω
)
0.1 1.0 10
3.5V
6V V GS =3V 8V 10V
1
100
10
TYPICAL CHARACTERISTICS
Saturation Characteristics
V DS - Drain Source Voltage (Volts)
0 1 2 3 4 5 6 7 8 9 10
I D
- D
ra
in
C
u
rr
e
nt (Amps)
Normalised R DS(on) and V GS(th) v Temperature
T j -Junction Temperature (°C)
Normalised R
D
S (o
n)
a
nd
V
G
S
(th)
-50 -25 0 25 50 75 100 150 125 175 200
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Dr
ai n-
Sour
ce R
es
is ta
nc
e R D S( on
)
Gate Thres
hold Volt
age V
GS(TH)
I D= 1.5A
V GS= 10V
I D= 1mA
V GS= V DS
2.6
225
7V
5V
4V
6V
8V
9V
V GS=
10V
3V
V DS -Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-
Ca
pa
c
ita
nce
(pF)
0 20 40 60 80 100
0
120
80
40
160
200
Q-Charge (nC)
V
GS
-Ga
te
So
ur
ce V
o
lta
ge
(
V
olts)
Gate charge v gate-source voltage
10
8
6
2
0
4
12
14
16
V DD =
20V
I D= 1.5A
50V
0 1 2 3 4 5 6
Transconductance v drain current
I D(on) - Drain Current (Amps )
g
fs
-T
rans
c o
n
ductance (mS)
0 1 2
0
100
200
400
300
500
3 4 5
V DS= 10V
4
1
2
5
3
0
C oss
C iss
C rss
80V
2V
2.5V
3.5V
5V
600
700
900
800
1000
ZVN4210G
D
D
S
G