Diodes ZXMN7A11G - Manual (Page 4)

ZXMN7A11G
Issue 1 - March 2006 4 www.zetex.com
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown
voltage V
(BR)DSS
70 V I
D
= 250 ␮A, V
GS
=0V
Zero gate voltage drain current I
DSS
1
␮A
V
DS
= 70V, V
GS
=0V
Gate-body leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
1.0 V I
D
= 250
␮A, V
DS
=V
GS
Static drain-source on-state
resistance
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
␮
s; duty cycle
Յ
2%.
R
DS(on)
0.13
⍀
V
GS
= 10V, I
D
= 4.4A
0.19
⍀
V
GS
= 4.5V, I
D
= 3.8A
Forward transconductance
(*)(‡)
g fs
4.66 S V
DS
= 15V, I
D
= 4.4A
Dynamic
(‡)
Input capacitance C
iss
298 pF
V
DS
= 40V, V
GS
=0V
f=1MHz
Output capacitance C
oss
35 pF
Reverse transfer capacitance C
rss
21 pF
Switching
(†)(‡)
(†) Switching characteristics are independent of operating junction temperature.
Turn-on-delay time t
d(on)
1.9 ns
V
DD
= 35V, I
D
= 1A
R
G
≅6.0⍀, V
GS
= 10V
Rise time t
r
2 ns
Turn-off delay time t
d(off)
11.5 ns
Fall time t
f
5.8 ns
Total gate charge Q
g
4.35 nC V
DS
= 35V, V
GS
= 5V
I
D
= 4.4A
Total gate charge Q
g
7.4 nC
V
DS
=35V, V
GS
= 10V
I
D
= 4.4A
Gate-source charge Q
gs
1.06 nC
Gate drain charge Q
gd
1.8 nC
Source-drain diode
Diode forward voltage
(*) V
SD
0.85 0.95 V T
j
=25°C, I
S
= 2.5A,
V
GS
=0V
Reverse recovery time
(‡)
(‡) For design aid only, not subject to production testing.
t
rr
19.8 ns
T
j
=25°C, I
S
= 2.5A,
di/dt=100A/ ␮s
Reverse recovery charge
(‡) Q
rr
14 nC