Diodes ZXMN7A11G - Manual (Page 2)

ZXMN7A11G
Issue 1 - March 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t
Յ
5 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10
␮
s - pulse width limited by maximum junction
temperature.
Parameter Symbol Limit Unit
Drain-source voltage V
DSS
70 V
Gate-source voltage V
GS
±20 V
Continuous drain current @ V
GS
=10V; T
A
=25°C
(b) I
D
3.8 A
@ V
GS
=10V; T
A
=70°C
(b) 3.0 A
@ V
GS
=10V; T
A
=25°C
(a) 2.7 A
Pulsed drain current
(c) I
DM
10 A
Continuous source current (body diode)
(b) I
S
5 A
Pulsed source current (body diode)
(c) I
SM
10 A
Power dissipation at T
A
=25°C
(a)
Linear derating factor
P
D
2
16
W
mW/°C
Power dissipation at T
A
=25°C
(b)
Linear derating factor
P
D
3.9
31
W
mW/°C
Operating and storage temperature range T
j
, T
stg
-55 to
+150
°C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient
(a) R
⍜JA
62.5 °C/W
Junction to ambient
(b) R ⍜JA 32 °C/W