Zxmn6a25dn8, Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXMN6A25DN8 User Manual
Page 4
ZXMN6A25DN8
© Zetex Semiconductors plc 2006
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-source breakdown voltage V
(BR)DSS
60
V
I
D
=250
A, V
GS
=0V
Zero gate voltage drain current
I
DSS
1.0
mA
V
DS
=60V, V
GS
=0V
Gate-body leakage
I
GSS
100
nA
V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage
V
GS(th)
1.0
V
I
D
=250
A, V
DS
= V
GS
Static drain-source on-state
resistance
(*)
NOTES:
(*) Measured under pulsed conditions. Width=300
s. Duty cycle
Յ
2% .
R
DS(on)
0.050
⍀
V
GS
=10V, I
D
=3.6A
0.070
⍀
V
GS
=4.5V, I
D
=3A
Forward transconductance
g
fs
10.2
S
V
DS
=15V,I
D
=4.5A
Input capacitance
C
iss
1063
pF
V
DS
=30V,
V
GS
=0V,f=1MHz
Output capacitance
C
oss
104
pF
Reverse transfer capacitance
C
rss
64
pF
Switching
(†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on delay time
t
d(on)
3.8
ns
V
DD
=30V, I
D
=1A
RG
≅6.0⍀, V
GS
=10V
Rise time
t
r
4.0
ns
Turn-off delay time
t
d(off)
26.2
ns
Fall Time
t
f
10.6
ns
Gate charge
Q
g
11.0
nC
V
DS
=30V,V
GS
=5V,
I
D
=4.5A
Total gate charge
Q
g
20.4
nC
V
DS
=30V,V
GS
=10V,
I
D
=4.5A
Gate-source charge
Q
gs
4.1
nC
Gate-drain charge
Q
gd
5.1
nC
Source-drain diode
Diode Forward Voltage
V
SD
0.85
0.95
V
T
J
=25°C,
I
S
=5.5A,V
GS
=0V
Reverse recovery time
t
rr
22.0
ns
T
J
=25°C, I
F
=2.2A,
di/dt= 100A/
s
Reverse recovery charge
Q
rr
21.4
nC