Diodes ZXMN6A25DN8 - Manual (Page 2)

ZXMN6A25DN8
Issue 4 - November 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t
Յ
10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02, pulse width=300
␮
s - pulse width limited by maximum junction
temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
Parameter Symbol Limit Unit
Drain-source voltage V
DSS
60 V
Gate-source voltage V
GS
Ϯ20
V
Continuous drain current @V
GS
=10V; T
amb
=25°C
(b) (d)
I
D
5 A
@V
GS
=10V; T
amb
=70°C
(b) (d) 4 A
@V
GS
=10V; T
amb
=25°C
(a) (d) 3.8 A
Pulsed drain current
(c) I
DM
24 A
Continuous source current (body diode)
(b) I
S
3.4 A
Pulsed source current (body diode)
(c) I
SM
24 A
Power dissipation at T
amb
=25°C
(a) (d) P
D
1.25 W
Linear derating factor 10 mW/°C
Power dissipation at T
amb
=25°C
(a) (e) P
D
1.8 W
Linear derating factor 14 mW/°C
Power dissipation at T
amb
=25°C
(b) (d) P
D
2.1 W
Linear derating factor 17 mW/°C
Operating and storage temperature range T
j
:T
stg
-55 to +150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient
(a) (d) R ⍜JA 100 °C/W
Junction to ambient
(a) (e) R ⍜JA 70 °C/W
Junction to ambient
(b) (d) R
⍜JA
60 °C/W