Diodes ZXMN6A11DN8 - Manual (Page 2)

ZXMN6A11DN8
Issue 3 - September 2006 2 www.zetex.com
© Zetex Semiconductors plc 2006
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t Յ10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 ␮s - pulse width limited by maximum junction
temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
Parameter Symbol Limit Unit
Drain-source voltage V
DSS
60 V
Gate-source voltage V
GS
±20 V
Continuous drain current @ V
GS
= 10V; T
amb
=25°C (b) I
D
3.2 A
@ V
GS
= 10V; T
amb
=70°C (b) 2.6
@ V
GS
= 10V; T
amb
=25°C (a) 2.5
Pulsed drain current (c) I
DM
13.7 A
Continuous source current (body diode) (b) I
S
3.1 A
Pulsed source current (body diode) (c) I
SM
13.7 A
Power dissipation at T
amb
=25°C (a)(d) P
D
1.25 W
Linear derating factor 10 mW/°C
Power dissipation at T
amb
=25°C (a)(e) P
D
1.8 W
Linear derating factor 14 mW/°C
Power dissipation at T
amb
=25°C (b)(d) P
D
2.1 W
Linear derating factor 17 mW/°C
Operating and storage temperature range T
j
, T
stg
-55 to +150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient (a)(d) R
⍜JA
100 °C/W
Junction to ambient (a)(e) R ⍜JA 70 °C/W
Junction to ambient (b)(d) R
⍜JA
60 °C/W