Diodes ZXMN6A11DN8 - Manual

Issue 3 - September 2006 1 www.zetex.com
© Zetex Semiconductors plc 2006
ZXMN6A11DN8
60V SO8 Dual N-channel enhancement mode MOSFET
Summary
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• Low profile SOIC package
Applications
• DC-DC converters
• Power management functions
• Motor control
Ordering information
Device marking
ZXMN
6A11D
V
(BR)DSS
R
DS(on)
( ⍀) I
D
(A)
60
0.120 @ V
GS
= 10V 3.2
0.180 @ V
GS
= 4.5V 2.6
Device Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMN6A11DN8TA 7 12 500
D2
S2
G2
D1
S1
G1
D1 S1
G1
S2
G2
Pin out - top view
D1
D2
D2