Diodes ZXMN6A09G - Manual (Page 2)

ZXMN6A09G
Issue 3 - June 2007 2 www.zetex.com
© Zetex Semiconductors plc 2007
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t Յ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300 ␮s - pulse width limited by maximum junction
temperature.
Parameter Symbol Limit Unit
Drain-source voltage V
DSS
60 V
Gate-source voltage V
GS
±20 V
Continuous drain current @ V
GS
=10V; T
amb
=25°C (b) I
D
7.5 A
@ V
GS
=10V; T
amb
=70°C (b) 6
@ V
GS
=10V; T
amb
=25°C (a) 5.4
Pulsed drain current (c) I
DM
33 A
Continuous source current (body diode) (b) I
S
3.5 A
Pulsed source current (body diode) (c) I
SM
33 A
Power dissipation at T
amb
=25°C (a) P
D
2 W
Linear derating factor 16 mW/°C
Power dissipation at T
amb
=25°C (b) P
D
3.9 W
Linear derating factor 31 mW/°C
Operating and storage temperature range T
j
, T
stg
-55 to +150 °C
Thermal resistance
Parameter Symbol Limit Unit
Junction to ambient (a) R
⍜JA
62.5 °C/W
Junction to ambient (b) R ⍜JA 32.2 °C/W