Diodes ZXMN6A09G User Manual
Summary description, Features, Applications
© Zetex Semiconductors plc 2007
ZXMN6A09G
60V SOT223 N-channel enhancement mode MOSFET
Summary
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage
power management applications.
Features
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT223 package
Applications
•
DC-DC converters
•
Power management functions
•
Disconnect switches
•
Motor control
Ordering information
Device marking
ZXMN
6A09
V
(BR)DSS
R
DS(on)
(
⍀)
I
D
(A)
60
0.040 @ V
GS
= 10V
7.5
0.060 @ V
GS
= 4.5V
6.2
Device
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMN6A09GTA
7
12
1000
D
S
G
D
Pinout - top view
S
D
G
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