Diodes ZXMN6A09DN8 - Manual (Page 4)

ZXMN6A09DN8
Issue 6 - January 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown voltage V
(BR)DSS
60 V I
D
= 250
␮A, V
GS
=0V
Zero gate voltage drain current I
DSS
1 ␮A V
DS
= 60V, V
GS
=0V
Gate-body leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
1.0 3.0 V I
D
= 250 ␮A, V
DS
=V
GS
Static drain-source on-state
resistance (*)
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300 s; duty cycle Յ2%.
R
DS(on)
0.040
⍀
V
GS
= 10V, I
D
= 8.2A
0.060
⍀
V
GS
= 4.5V, I
D
= 7.4A
Forward transconductance (*)(‡) g
fs
15 S V
DS
= 15V, I
D
= 8.2A
Dynamic (‡)
Input capacitance C
iss
1407 pF V
DS
= 40V, V
GS
=0V
f=1MHz
Output capacitance C
oss
121 pF
Reverse transfer capacitance C
rss
59 pF
Switching (†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on-delay time t
d(on)
4.9 ns V
DD
= 15V, I
D
= 3.5A
R
G
≅6.0⍀, V
GS
= 10V
Rise time t
r
5.0 ns
Turn-off delay time t
d(off)
25.3 ns
Fall time t
f
4.6 ns
Total gate charge Q
g
12.4 nC V
DS
= 15V, V
GS
= 5V
I
D
= 3.5A
Total gate charge Q
g
24.2 nC V
DS
= 15V, V
GS
= 5V
I
D
= 3.5A
Gate-source charge Q
gs
5.2 nC
Gate drain charge Q
gd
3.5 nC
Source-drain diode
Diode forward voltage (*) V
SD
0.85 0.95 V T
j
=25°C, I
S
= 6.6A,
V
GS
=0V
Reverse recovery time (‡) t
rr
26.3 ns T
j
=25°C, I
S
= 3.5A,
di/dt=100A/ ␮s
Reverse recovery charge (‡) Q
rr
26.6 nC