Absolute maximum ratings, Thermal resistance, Zxmn6a09dn8 – Diodes ZXMN6A09DN8 User Manual
Page 2
ZXMN6A09DN8
© Zetex Semiconductors plc 2007
Absolute maximum ratings
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t
Յ10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300
s - pulse width limited by maximum junction
temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
Parameter
Symbol
Limit
Unit
Drain-source voltage
V
DSS
60
V
Gate-source voltage
V
GS
±20
V
Continuous drain current @ V
GS
=10V; T
amb
=25°C
(b)
I
D
5.6
A
@ V
GS
=10V; T
amb
=70°C
(b)
4.5
@ V
GS
=10V; T
amb
=25°C
(a)
4.3
Pulsed drain current
(c)
I
DM
27
A
Continuous source current (body diode)
(b)
I
S
3.5
A
Pulsed source current (body diode)
(c)
I
SM
27
A
Power dissipation at T
amb
= 25°C
(a)(d)
P
D
1.25
W
Linear derating factor
10
mW/°C
Power dissipation at T
amb
= 25°C
(b)(e)
P
D
1.8
W
Linear derating factor
14
mW/°C
Power dissipation at T
amb
= 25°C
(b)(d)
P
D
2.1
W
Linear derating factor
17
mW/°C
Operating and storage temperature range
T
j
, T
stg
-55 to +150
°C
Thermal resistance
Parameter
Symbol
Limit
Unit
Junction to ambient
(a)(d)
R
⍜JA
100
°C/W
Junction to ambient
(a)(e)
R
⍜JA
70
°C/W
Junction to ambient
R
⍜JA
60
°C/W