Diodes ZXMN6A08E6Q - Manual (Page 4)

ZXMN6A08E6Q
Document Number DS36690 Rev. 2 - 2
4 of 8
www.diodes.com
December 2013
© Diodes Incorporated
ADVAN
CE I
N
F
O
RM
ATI
O
N
ZXMN6A08E6Q
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
60   V I
D
= 250µA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
  0.5 µA V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage I
GSS
  100 nA V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
1   V I
D
= 250µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 9) R
DS(ON)

0.067 0.08
Ω
V
GS
= 10V, I
D
= 4.8A
0.1 0.15 V
GS
= 4.5V, I
D
= 4.2A
Forward Transconductance (Notes 9 & 10) g
fs
 6.6  S V
DS
= 15V, I
D
= 4.8A
Diode Forward Voltage (Note 9) V
SD
 0.88 1.2 V I
S
= 4A, V
GS
= 0V, T
J
= +25°C
Reverse recovery time (Note 10) t
rr
 19.2  ns I
F
= 1.4A, di/dt = 100A/µs,
T
J
= +25°C Reverse recovery charge (Note 10) Q
rr
 30.3  nC
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
 459  pF
V
DS
= 40V, V
GS
= 0V
f = 1MHz
Output Capacitance C
oss
 44.2  pF
Reverse Transfer Capacitance C
rss
 24.1  pF
Total Gate Charge (Note 11) Q
g
 3.7  nC V
GS
= 4.5V
V
DS
= 30V
I
D
= 1.4A
Total Gate Charge (Note 11) Q
g
 5.8  nC
V
GS
= 10V Gate-Source Charge (Note 11) Q
gs
 1.4  nC
Gate-Drain Charge (Note 11) Q
gd
 1.9  nC
Turn-On Delay Time (Note 11) t
D(on)
 2.6  ns
V
DD
= 30V, V
GS
= 10V
I
D
= 1.5A, R
G
 6Ω
Turn-On Rise Time (Note 11) t
r
 2.1  ns
Turn-Off Delay Time (Note 11) t
D(off)
 12.3  ns
Turn-Off Fall Time (Note 11) t
f
 4.6  ns
Notes: 9. Measured under pulsed conditions. Pulse width  300µs; duty cycle  2%.
10. For design aid only, not subject to production testing.
11. Switching characteristics are independent of operating junction temperatures.