Diodes ZXMN6A08E6Q - Manual (Page 2)

ZXMN6A08E6Q
Document Number DS36690 Rev. 2 - 2
2 of 8
www.diodes.com
December 2013
© Diodes Incorporated
ADVAN
CE I
N
F
O
RM
ATI
O
N
ZXMN6A08E6Q
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Drain-Source Voltage V
DSS
60 V
Gate-Source Voltage V
GS
20 V
Continuous Drain Current V
GS
= 10V
(Note 7)
I
D
3.5
A T
A
= +70°C (Note 7) 2.8
(Note 6) 2.8
Pulsed Drain Current V
GS
= 10V (Note 8) I
DM
16 A
Continuous Source Current (Body diode) (Note 7) I
S
2.6 A
Pulsed Source Current (Body diode) (Note 8) I
SM
16 A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation
Linear Derating Factor
(Note 6)
P
D
1.1
8.8
W
mW/°C
(Note 7)
1.7
13.6
Thermal Resistance, Junction to Ambient
(Note 6)
R
θJA
113
°C/W
(Note 7) 73
Operating and Storage Temperature Range T
J
, T
STG
-55 to +150 °C
Notes: 6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as note (6), except the device is measured at t
 10 sec.
8. Same as note (6), except the device is pulsed with D = 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature.