A dv a n ce i nf o rm at ion zxmn6a08e6, Electrical characteristics – Diodes ZXMN6A08E6 User Manual
Page 4
ZXMN6A08E6
Document Number DS33376 Rev. 7 - 2
4 of 8
December 2013
© Diodes Incorporated
A
DV
A
N
CE
I
NF
O
RM
AT
ION
ZXMN6A08E6
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
60
V
I
D
= 250µA, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
0.5
µA
V
DS
= 60V, V
GS
= 0V
Gate-Source Leakage
I
GSS
±100
nA
V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
1.0
V
I
D
= 250µA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 8)
R
DS(ON)
0.067
0.080
Ω
V
GS
= 10V, I
D
= 4.8A
0.100
0.150
V
GS
= 4.5V, I
D
= 4.2A
Forward Transconductance (Notes 8 & 9)
g
fs
6.6
S
V
DS
= 15V, I
D
= 4.8A
Diode Forward Voltage (Note 8)
V
SD
0.88
1.2
V
I
S
= 4A, V
GS
= 0V, T
J
= +25°C
Reverse recovery time (Note 9)
t
rr
19.2
ns
I
F
= 1.4A, di/dt = 100A/µs,
T
J
= +25°C
Reverse recovery charge (Note 9)
Q
rr
30.3
nC
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
459
pF
V
DS
= 40V, V
GS
= 0V
f = 1MHz
Output Capacitance
C
oss
44.2
pF
Reverse Transfer Capacitance
C
rss
24.1
pF
Total Gate Charge (Note 10)
Q
g
3.7
nC
V
GS
= 4.5V
V
DS
= 30V
I
D
= 1.4A
Total Gate Charge (Note 10)
Q
g
5.8
nC
V
GS
= 10V
Gate-Source Charge (Note 10)
Q
gs
1.4
nC
Gate-Drain Charge (Note 10)
Q
gd
1.9
nC
Turn-On Delay Time (Note 10)
t
D(on)
2.6
ns
V
DD
= 30V, V
GS
= 10V
I
D
= 1.5A, R
G
≅ 6.0
Ω
Turn-On Rise Time (Note 10)
t
r
2.1
ns
Turn-Off Delay Time (Note 10)
t
D(off)
12.3
ns
Turn-Off Fall Time (Note 10)
t
f
4.6
ns
Notes:
8. Measured under pulsed conditions. Pulse width
≤ 300µs; duty cycle ≤ 2%.
9. For design aid only, not subject to production testing.
10. Switching characteristics are independent of operating junction temperatures.