Diodes ZXMN6A07Z - Manual (Page 4)

ZXMN6A07Z
Issue 8 - January 2007 4 www.zetex.com
© Zetex Semiconductors plc 2007
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown
voltage V
(BR)DSS
60 V I
D
= 250
␮A, V
GS
=0V
Zero gate voltage drain current I
DSS
1
␮A
V
DS
= 60V, V
GS
=0V
Gate-body leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
1.0 3.0 V I
D
= 250
␮A, V
DS
=V
GS
Static drain-source on-state
resistance
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width Յ300 ␮
s; duty cycle Յ2%.
R
DS(on)
0.250 ⍀ V
GS
= 10V, I
D
= 1.8A
0.350
⍀
V
GS
= 4.5V, I
D
= 1.3A
Forward transconductance (*)(‡) g
fs
2.3 S V
DS
= 15V, I
D
= 1.8A
Dynamic (‡)
Input capacitance C
iss
166 pF V
DS
= 40V, V
GS
=0V
f=1MHz
Output capacitance C
oss
19.5 pF
Reverse transfer capacitance C
rss
8.7 pF
Switching (†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on-delay time t
d(on)
1.8 ns V
DD
= 30V, V
GS
= 10V
I
D
= 1.8A
R
G
≈
6.0
⍀
Rise time t
r
1.4 ns
Turn-off delay time t
d(off)
4.9 ns
Fall time t
f
2.0 ns
Total gate charge Q
g
1.65 V
DS
= 30V, V
GS
= 5V
I
D
= 1.8A
Total gate charge Q
g
3.2 nC V
DS
= 30V, V
GS
= 10V
I
D
= 1.8A
Gate-source charge Q
gs
0.67 nC
Gate drain charge Q
gd
0.82 nC
Source-drain diode
Diode forward voltage (*) V
SD
0.80 0.95 V T
j
=25°C, I
S
= 0.45A,
V
GS
=0V
Reverse recovery time (‡) t
rr
20.5 ns T
j
=25°C, I
F
= 1.8A,
di/dt=100A/
␮s
Reverse recovery charge (‡) Q
rr
21.3 nC