Diodes ZXMN4A06K - Manual (Page 4)

ZXMN4A06K
Issue 1 - March 2006 4 www.zetex.com
© Zetex Semiconductors plc 2005
Electrical characteristics (at T
A
= 25°C unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Conditions
Static
Drain-source breakdown
voltage V
(BR)DSS
40 V I
D
=250
␮A, V
GS
=0V
Zero gate voltage drain current I
DSS
1
␮A
V
DS
=40V, V
GS
=0V
Gate-body leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
1.0 V I
D
=250
␮A, V
DS
= V
GS
Static drain-source on-state
resistance
(*)
NOTES:
(*) Measured under pulsed conditions. Width Յ300␮s. Duty cycle Յ2%.
R
DS(on)
0.050
⍀
V
GS
=10V, I
D
=4.5A
0.075
⍀
V
GS
=4.5V, I
D
=3.2A
Forward transconductance
(‡) g
fs
11.5 S V
DS
=15V,I
D
=4.5A
Dynamic
(‡)
Input capacitance C
iss
827 pF
V
DS
=20 V, V
GS
=0V,
f=1MHz
Output capacitance C
oss
133 pF
Reverse transfer capacitance C
rss
84 pF
Switching
(†) (‡)
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
Turn-on delay time t
d(on)
3.2 ns
V
DD
=20V, I
D
=1A
R
G
=6.0⍀, V
GS
=10V
(refer to test circuit)
Rise time t
r
3.8 ns
Turn-off delay time t
d(off)
23.3 ns
Fall time t
f
10.9 ns
Total gate charge Q
g
17.1 nC
V
DS
=20V,V
GS
=10V,
I
D
=4.5A
(refer to test circuit)
Gate-source charge Q
gs
2.41 nC
Gate-drain charge Q
gd
3.4 nC
Source-drain diode
Diode forward voltage
(*) V
SD
0.83 0.95 V T
J
=25°C, I
S
=4.5A,
V
GS
=0V
Reverse recovery time
(†)
t
rr
16 ns T
J
=25°C, I
F
=4A,
di/dt= 100A/
␮s
Reverse recovery charge
(‡) Q
rr
9 nC