Diodes ZXMN4A06K - Manual

Issue 1 - March 2006 1 www.zetex.com
© Zetex Semiconductors plc 2005
ZXMN4A06K
40V N-channel enhancement mode MOSFET
Summary
V
(BR)DSS
= -40V; R
DS(ON)
= 0.05
⍀; I
D
= 10.9A
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage,
power management applications.
Features
• Low on-resistance
• Fast switching speed
• Low threshold
• Low gate drive
• DPAK package
Applications
• DC - DC converters
• Audio output stages
• Relay and solenoid driving
• Motor control
Ordering information
Device marking
ZXMN
4A06
Device Reel size
(inches)
Tape width
(mm)
Quantity
per reel
ZXMN4A06KTC 13 16 2,500
D
S
G
Pinout - Top view