Diodes ZXMN4A06GQ - Manual (Page 4)

ZXMN4A06GQ
Document number: DS36694 Rev. 2 - 2
4 of 6
www.diodes.com
January 2014
© Diodes Incorporated
ZXMN4A06GQ
ADVANCED INFORMATION
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
J
°
R
, D
R
AI
N
-S
O
U
R
C
E
O
N
-R
ESI
S
TA
N
C
E (
)
DS
(O
N)
Ω
V = 4.5V
I = 5.0A
GS
D
V = V
I = 4.5A
GS
D
10
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation
vs. Ambient Temperature
J
°
I = 1mA
D
I = 250µA
D
V
, G
A
TE T
H
RESHO
L
D VO
LT
AGE
(V
)
GS
(t
h
)
0
2
4
6
8
10
12
14
16
18
20
0 0.3 0.6 0.9 1.2 1.5
V , SOURCE-DRAIN VOLTAGE (V)
SD
Figure 9 Diode Forward Voltage vs. Current
I,
S
O
U
R
C
E
C
U
R
R
EN
T
(A
)
S
T = 150°C
A
T = 125°C
A
T = 85°C
A
T = 25°C
A
T = -55°C
A
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 10 Typical Junction Capacitance
C
, J
U
N
C
T
IO
N
C
A
P
A
C
IT
A
N
C
E (
pF
)
T
C
iss
C
oss
C
rss
f = 1MHz
0
2
4
6
8
10
0 2 4 6 8 10 12 14 16 18 20
Q (nC)
g
, TOTAL GATE CHARGE
Figure 11 Gate Charge
V
G
A
T
E
T
H
R
ES
H
O
LD
V
O
LT
A
G
E (
V
)
GS
V = 30V
I = A
DS
D
2.5
0.01
0.1
1
10
100
0.1 1 10 100
DC
P = 10s
W
P = 1s
W
P = 100ms
W
P = 10ms
W
P = 1ms
W
P = 100µs
W
-V , DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
DS
-I
, D
R
AI
N
C
U
R
R
EN
T
(A
)
D
T = 150°C
T = 25°C
J(max)
A
V = 4.5V
Single Pulse
GS
DUT on 1 * MRP Board
R
Limited
DS(on)