Diodes ZXMN4A06G - Manual (Page 3)

ZXMN4A06G
Document number: DS33545 Rev. 3 - 2
3 of 7
www.diodes.com
January 2014
© Diodes Incorporated
ZXMN4A06G
ADVANCED INFORMATION
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
40   V I
D
= 250µA, V
GS
= 0V
Zero Gate Voltage Drain Current I
DSS
  1 µA V
DS
= 40V, V
GS
= 0V
Gate-Source Leakage I
GSS
  100 nA V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
1  2 V I
D
= 250 A, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 9) R
DS(ON)
 
0.05
Ω
V
GS
= 10V, I
D
= 4.5A
0.075 V
GS
= 4.5V, I
D
= 3.2A
Forward Transconductance (Notes 11) g
fs
 8.7  S V
DS
= 15V, I
D
= 2.5A
Diode Forward Voltage (Note 9) V
SD
 0.8 0.95 V I
S
= 2.5A, V
GS
= 0V, T
J
= +25°C
Reverse recovery time (Note 11) t
rr
 19.86  ns I
F
= 2.5A, di/dt = 100A/µs,
T
J
= +25°C Reverse recovery charge (Note 11) Q
rr
 16.36  nC
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
 770  pF
V
DS
= 40V, V
GS
= 0V
f = 1MHz
Output Capacitance C
oss
 92  pF
Reverse Transfer Capacitance C
rss
 61  pF
Total Gate Charge (Note 11) Q
g
 18.2  nC
V
DS
= 30V, V
GS
= 10V,
I
D
= 2.5A (refer to test circuit)
Gate-Source Charge (Note 11) Q
gs
 2.1  nC
Gate-Drain Charge (Note 11) Q
gd
 4.5  nC
Turn-On Delay Time (Note 11) t
D(on)
 2.55  ns
V
DD
= 30V, V
GS
= 10V
I
D
= 2.5A, R
G
 6Ω
(refer to test circuit)
Turn-On Rise Time (Note 11) t
r
 4.45  ns
Turn-Off Delay Time (Note 11) t
D(off)
 28.61  ns
Turn-Off Fall Time (Note 11) t
f
 7.35  ns
Notes: 9. Measured under pulsed conditions. Pulse width  300µs; duty cycle  2%.
10. Switching characteristics are independent of operating junction temperatures.
11. For design aid only, not subject to production testing.