Zvn4306gv, Typical characteristics, Saturation characteristics – Diodes ZVN4306GV User Manual
Page 3: Normalised r, And v, V temperature, On-resistance v drain current, Capacitance v drain-source voltage, Gate charge v gate-source voltage, Transconductance v drain current
TYPICAL CHARACTERISTICS
Saturation Characteristics
V
DS
- Drain Source
Voltage (Volts)
0
1
2
3
4
5
6
7
8
9
10
I
D
- Dr
a
in Cu
rren
t
(Amp
s)
Normalised R
DS(on)
and V
GS(th)
v Temperature
T
j
-Junction Temperature (°C)
N
or
m
al
ise
d
R
D
S(o
n
)
a
nd
V
GS(
th)
-50 -25
0
25 50
75 100
150
125
175 200
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drain-
So
urce Re
sist
an
ce
R
DS(
on)
Gate Threshold Voltage V
GS(TH)
I
D=
3A
V
GS=
10V
I
D=
1mA
V
GS=
V
DS
2.6
225
0
4
1
2
7
6
5
3
10
9
8
10V
8V
9V
7V
5V
4V
6V
3.5V
V
GS=
20V 12V
On-resistance v drain current
I
D-
Drain Current
(Amps)
R
DS(
o
n
)
-Drai
n
S
o
u
rce
O
n
R
e
s
is
ta
n
c
e
(
Ω
)
0.1
10
100
3.5V
5V
V
GS
=3V
6V
0.1
10
1.0
1
10V
3V
12
11
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-Cap
a
ci
tan
ce (pF
)
C
oss
C
iss
C
rss
0
10
20
30
40
50
60
70
80
0
300
200
100
400
500
Q-Charge (nC)
V
GS
-Gate S
ou
rce
V
ol
ta
ge
(
V
ol
ts)
Gate charge v gate-source voltage
0
10
8
6
2
0
4
12
14
16
V
DD
=
20V
I
D=
3A
40V
60V
1
2
3
4
5
6
7
8
9
10 11
12
Transconductance v drain current
I
D(on)
- Drain Current (Amps
)
g
fs
-Tran
sco
nd
ucta
nce
(
S
)
0
2
4
6
8
10
V
DS=
10V
0
1
2
4
3
5
12
14
16
18
20
8V
ZVN4306GV