Diodes VN10LP - Manual (Page 3)

VN10LP
Document Number DS33198 Rev. 3 - 2
3 of 6
www.diodes.com
September 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
VN10LP
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
60 ⎯ ⎯ V I
D
= 250 μA, V
GS
= 0V
Zero Gate Voltage Drain Current I DSS
⎯ ⎯ 10 μA
V DS = 60V, V GS = 0V
Gate-Source Leakage I
GSS
⎯ ⎯ ±100 nA V
GS
=
±20V, V
DS
= 0V
ON CHARACTERISTICS
On state Drain Current (Note 8)
I
D(on)
750 ⎯ ⎯ mA V
DS
=15 V, V
GS
=10V
Gate Threshold Voltage V
GS(th)
0.8 ⎯ 2.5 V I
D
= 1mA, V
DS
= V
GS
Static Drain-Source On-Resistance (Note 8) R
DS (ON)
⎯ ⎯
5.0
Ω
V
GS
= 10V, I
D
= 500mA
7.5 V GS = 5V, I D = 200mA
Forward Transconductance (Notes 8 and 10) g
fs
100 ⎯ ⎯ mS V
DS
= 15V, I
D
= 500mA
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
C
iss
⎯ ⎯ 60
pF
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance C
oss
⎯ ⎯ 25
Reverse Transfer Capacitance C
rss
⎯ ⎯ 5
Turn-On Time (Note 9) t
(on)
⎯ ⎯ 10
ns V
DD
= 15V, I
D
= 600mA
Turn-Off Time (Note 9) t
(off)
⎯ ⎯ 10
Notes: 8. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤ 2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.