Zxmn3f30fh, Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXMN3F30FH User Manual
Page 4
ZXMN3F30FH
© Zetex Semiconductors plc 2008
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-Source breakdown
Voltage
V
(BR)DSS
30
V
I
D
= 250
μA, V
GS
=0V
Zero gate voltage drain
current
I
DSS
0.5
μA
V
DS
= 30V, V
GS
=0V
Gate-body leakage
I
GSS
100
nA
V
GS
=±20V, V
DS
=0V
Gate-Source threshold
voltage
V
GS(th)
1.0
3.0
V
I
D
= 250
μA, V
DS
=V
GS
Static Drain-Source
on-state resistance
(*)
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤2%.
R
DS(on)
0.047
0.065
Ω
Ω
V
GS
= 10V, I
D
= 3.2A
V
GS
= 4.5V, I
D
= 2.8A
Forward
transconductance
g
fs
5.2
S
V
DS
= 15V, I
D
= 2.5A
Dynamic
(†)
(†) For design aid only, not subject to production testing.
Input capacitance
C
iss
318
pF
V
DS
= 15V, V
GS
=0V
f=1MHz
Output capacitance
C
oss
75
pF
Reverse transfer
capacitance
C
rss
45
pF
Switching
(†) (‡)
(‡) Switching characteristics are independent of operating junction temperature.
Turn-on-delay time
t
d(on)
1.6
ns
V
DD
= 15V, V
GS
= 10V
I
D
= 1A
R
G
≈
6.0
Ω
Rise time
t
r
2.6
ns
Turn-off delay time
t
d(off)
17
ns
Fall time
t
f
9.3
ns
Total gatecharge
Q
g
7.7
nC
V
DS
= 15V, V
GS
= 10V
I
D
= 2.5A
Gate-Source charge
Q
gs
1
nC
Gate-Drain charge
Q
gd
1.8
nC
Source-drain diode
Diode forward voltage
V
SD
0.73
1.2
V
I
S
= 1.25A, V
GS
=0V
Reverse recovery time
t
rr
12
ns
T
j
=25
o
C, I
F
=1.6A
di/dt=100A/
s
Reverse recovery charge
Q
rr
4.8
nC