Diodes ZXMN3F30FH - Manual (Page 2)

ZXMN3F30FH
Issue 2 - February 2008 2 www.zetex.com
© Zetex Semiconductors plc 2008
Absolute maximum ratings
Thermal resistance
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t
≤ 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 μs - pulse width limited by maximum junction
temperature.
(d) Thermal resistance from junction to solder-point (at the end of the drain lead).
Parameter Symbol Limit Unit
Drain source voltage V
DSS
30 V
Gate source voltage V
GS
±20 V
Continous Drain Current @ V
GS
=4.5; T
A
=25
°C (b)
@ V
GS
=4.5; T
A
=70
°C (b)
@ V
GS
=4.5; T
A
=25
°C (a)
I
D
4.6
3.7
3.8
A
A
A
Pulsed drain current (c) I
DM
21 A
Continuous source current (body diode) (b) I
S
2.2 A
Pulsed source current (body diode) (c) I
SM
21 A
Power dissipation at T
A
=25
°C (a)
Linear derating factor
P
D
0.95
7.6
W
mW/
°C
Power dissipation at T
A
=25
°C (b)
Linear derating factor
P
D
1.4
11.2
W
mW/
°C
Operating and storage temperature range T
j
, T
stg
-55 to 150
°C
Parameter Symbol Limit Unit
Junction to ambient (a) R ⍜JA 131
°C/W
Junction to ambient (b) R ⍜JA 89
°C/W
Junction to lead (d) R ⍜JL 68
°C/W