Diodes ZXMN3B14F - Manual (Page 2)

ZXMN3B14F
S E M I C O N D U C T O R S
ISSUE 2 - JANUARY 2006
2
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R ⍜JA 125 °C/W
Junction to Ambient
(b)
R ⍜JA 83 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t Յ 5 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300 ␮s - pulse width limited by maximum junction temperature.
THERMAL RESISTANCE
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GS
Ϯ12 V
Continuous Drain Current @ V
GS
= 4.5V; T
A
=25°C
(b)
@ V
GS
= 4.5V; T
A
=70°C
(b)
@ V
GS
= 4.5V; T
A
=25°C (a)
I
D
3.5
2.9
2.9 A
A
A
Pulsed Drain Current (c) I
DM
16 A
Continuous Source Current (Body Diode) (b) I
S
2.4 A
Pulsed Source Current (Body Diode) (c) I
SM
16 A
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
P
D
1
8
W
mW/°C
Power Dissipation at T
A
=25°C
(b)
Linear Derating Factor
P
D
1.5
12
W
mW/°C
Operating and Storage Temperature Range T
j
, T
stg
-55 to +150 °C
ABSOLUTE MAXIMUM RATINGS