beautypg.com

Zxmn3a04k, Electrical characteristics (at t, 25°c unless otherwise stated) – Diodes ZXMN3A04K User Manual

Page 4

background image

ZXMN3A04K

S E M I C O N D U C T O R S

ISSUE 1 - FEBRUARY 2004

4

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT CONDITIONS

STATIC

Drain-source breakdown voltage

V

(BR)DSS

30

V

I

D

= 250

␮A, V

GS

=0V

Zero gate voltage drain current

I

DSS

0.5

␮A V

DS

= 30V, V

GS

=0V

Gate-body leakage

I

GSS

100

nA

V

GS

=±20V, V

DS

=0V

Gate-source threshold voltage

V

GS(th)

1.0

V

I

D

= 250mA, V

DS

=V

GS

Static drain-source on-state resistance

(1)

R

DS(on)

0.02

V

GS

= 10V, I

D

= 12A

0.03

V

GS

= 4.5V, I

D

= 9.8A

Forward transconductance

(1) (3)

g

fs

22.1

S

V

DS

= 15V, I

D

= 12.6A

DYNAMIC

(3)

Input capacitance

C

iss

1890

pF

V

DS

= 15V, V

GS

=0V

f=1MHz

Output capacitance

C

oss

349

pF

Reverse transfer capacitance

C

rss

218

pF

SWITCHING

(2) (3)

Turn-on-delay time

t

d(on)

5.2

ns

V

DD

= 15V, I

D

= 1A

R

G

≅6.0⍀, V

GS

= 10V

Rise time

t

r

6.1

ns

Turn-off delay time

t

d(off)

38.1

ns

Fall time

t

f

20.2

ns

Total gate charge

Q

g

19.9

nC

V

DS

= 15V, V

GS

= 5V

I

D

= 6.5A

Total gate charge

Q

g

36.8

nC

V

DS

= 15V, V

GS

= 10V

I

D

= 6.5A

Gate-source charge

Q

gs

5.8

nC

Gate drain charge

Q

gd

7.1

nC

SOURCE-DRAIN DIODE

Diode forward voltage (1)

V

SD

0.85

0.95

V

T

j

=25°C, I

S

= 6.8A,

V

GS

=0V

Reverse recovery time (3)

t

rr

18.4

ns

T

j

=25°C, I

S

= 2.3A,

di/dt=100A/

␮s

Reverse recovery charge (3)

Q

rr

11

nC

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated)

NOTES

(1) Measured under pulsed conditions. Pulse width

Յ 300␮s; duty cycle Յ 2%.

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.