Diodes ZXMN3A04K - Manual (Page 4)

ZXMN3A04K
S E M I C O N D U C T O R S
ISSUE 1 - FEBRUARY 2004
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-source breakdown voltage V
(BR)DSS
30 V I
D
= 250 ␮A, V
GS
=0V
Zero gate voltage drain current I
DSS
0.5 ␮A V
DS
= 30V, V
GS
=0V
Gate-body leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-source threshold voltage V
GS(th)
1.0 V I
D
= 250mA, V
DS
=V
GS
Static drain-source on-state resistance
(1)
R
DS(on)
0.02 ⍀ V
GS
= 10V, I
D
= 12A
0.03 ⍀ V
GS
= 4.5V, I
D
= 9.8A
Forward transconductance (1) (3) g
fs
22.1 S V
DS
= 15V, I
D
= 12.6A
DYNAMIC (3)
Input capacitance C
iss
1890 pF
V
DS
= 15V, V
GS
=0V
f=1MHz
Output capacitance C
oss
349 pF
Reverse transfer capacitance C
rss
218 pF
SWITCHING (2) (3)
Turn-on-delay time t
d(on)
5.2 ns
V
DD
= 15V, I
D
= 1A
R
G
≅6.0⍀, V
GS
= 10V
Rise time t
r
6.1 ns
Turn-off delay time t
d(off)
38.1 ns
Fall time t
f
20.2 ns
Total gate charge Q
g
19.9 nC V
DS
= 15V, V
GS
= 5V
I
D
= 6.5A
Total gate charge Q
g
36.8 nC
V
DS
= 15V, V
GS
= 10V
I
D
= 6.5A
Gate-source charge Q
gs
5.8 nC
Gate drain charge Q
gd
7.1 nC
SOURCE-DRAIN DIODE
Diode forward voltage (1) V
SD
0.85 0.95 V T
j
=25°C, I
S
= 6.8A,
V
GS
=0V
Reverse recovery time (3) t
rr
18.4 ns T
j
=25°C, I
S
= 2.3A,
di/dt=100A/ ␮s
Reverse recovery charge (3) Q
rr
11 nC
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
NOTES
(1) Measured under pulsed conditions. Pulse width Յ 300␮s; duty cycle Յ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.