Diodes ZXMN3A04K - Manual (Page 2)

ZXMN3A04K
S E M I C O N D U C T O R S
ISSUE 1 - FEBRUARY 2004
2
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DSS
30 V
Gate-source voltage V
GS
±20 V
Continuous drain current @ V
GS
=10V; T
A
=25°C
(b)
@ V
GS
=10V; T
A
=70°C (b)
@ V
GS
=10V; T
A
=25°C (a)
I
D
18.4
14.7
12.0
A
A
A
Pulsed drain current
(c)
I
DM
66 A
Continuous source current (body diode)
(b)
I
S
11.5 A
Pulsed source current (body diode) (c) I
SM
66 A
Power dissipation at T
A
=25°C (a)
Linear derating factor
P
D
4.3
34.4
W
mW/°C
Power dissipation at T
A
=25°C
(b)
Linear derating factor
P
D
10.1
80.8
W
mW/°C
Power dissipation at T
A
=25°C (d)
Linear derating factor
P
D
2.15
17.2
W
mW/°C
Operating and storage temperature range T
j
, T
stg
-55 to +150 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL VALUE UNIT
Junction to ambient (a) R ⍜JA 29 °C/W
Junction to ambient (b) R ⍜JA 12.3 °C/W
Junction to ambient (d) R ⍜JA 58 °C/W
NOTES
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at Յ 10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300 ␮s - pulse width limited by maximum junction temperature.
(d) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
THERMAL RESISTANCE