Diodes ZXMN3A04DN8 - Manual (Page 4)

ZXMN3A04DN8
ISSUE 2 - OCTOBER 2002
4
PARAMETER SYMBOL
MIN. TYP. MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS 30
V I
D
=250
µ
A, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS 0.5
µ A V
DS
=30V, V
GS
=0V
Gate-Body Leakage I
GSS 100
nA V
GS
=
±
20V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th) 1.0
V I
D
=250 µ A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1) R
DS(on) 0.02
0.03
Ω
Ω
V
GS
=10V, I
D
=12.6A
V
GS
=4.5V, I
D
=10.6A
Forward Transconductance (3) g
fs 22.1
S V
DS
=15V,I
D
=12.6A
DYNAMIC (3)
Input Capacitance C
iss 1890
pF
V
DS
=15V, V
GS
=0V,
f=1MHz
Output Capacitance C
oss 349
pF
Reverse Transfer Capacitance C
rss 218
pF
SWITCHING(2) (3)
Turn-On Delay Time t
d(on) 5.2
ns
V
DD
=15V, I
D
=1A
R G =6.0
Ω
, V GS =10V
Rise Time t
r 6.1
ns
Turn-Off Delay Time t
d(off) 38.1
ns
Fall Time t
f 20.2
ns
Gate Charge Q
g 19.9
nC V
DS
=15V,V
GS
=5V,
I
D
=6.5A
Total Gate Charge Q
g 36.8
nC
V
DS
=15V,V
GS
=10V,
I
D
=6.5A
Gate-Source Charge Q
gs 5.8
nC
Gate-Drain Charge Q
gd 7.1
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
SD 0.85 0.95
V T
J
=25°C, I
S
=6.8A,
V
GS
=0V
Reverse Recovery Time (3) t
rr 18.4
ns T
J
=25°C, I
F
=2.3A,
di/dt= 100A/
µ
s
Reverse Recovery Charge (3) Q
rr 11
nC
ELECTRICAL CHARACTERISTICS (at T
A
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width = 300 µ s. Duty cycle ≤ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.