Zxmn3a04dn8 – Diodes ZXMN3A04DN8 User Manual
Page 2
ZXMN3A04DN8
ISSUE 2 - OCTOBER 2002
2
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
R
θ
JA
100
°C/W
Junction to Ambient (b)(e)
R
θ
JA
69
°C/W
Junction to Ambient (b)(d)
R
θ
JA
58
°C/W
THERMAL RESISTANCE
Notes
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t
Յ10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature. Refer to Trnsient
Thermal Impedance Graph.
(d) For a dual device with one active die.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V
DSS
30
V
Gate Source Voltage
V
GS
Ϯ20
V
Continuous Drain Current (V
GS
=10V; T
A
=25°C)(b)(d)
(V
GS
=10V; T
A
=70°C)(b)(d)
(V
GS
=10V; T
A
=25°C)(a)(d)
I
D
8.5
6.8
6.5
A
Pulsed Drain Current (c)
I
DM
39
A
Continuous Source Current (Body Diode) (b)
I
S
3.6
A
Pulsed Source Current (Body Diode)(c)
I
SM
39
A
Power Dissipation at T
A
=25°C (a)(d)
Linear Derating Factor
P
D
1.25
10
W
mW/°C
Power Dissipation at T
A
=25°C (a)(e)
Linear Derating Factor
P
D
1.81
14.5
W
mW/°C
Power Dissipation at T
A
=25°C (b)(d)
Linear Derating Factor
P
D
2.15
17.2
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
ABSOLUTE MAXIMUM RATINGS.