Diodes ZXM62N03G - Manual (Page 4)

ZXM62N03G
ISSUE 1 - OCTOBER 2002
4
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
30 V I
D
=250
µ
A, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
1 ␮A V
DS
=30V, V
GS
=0V
Gate-Body Leakage I
GSS
100 nA V
GS
= Ϯ20V, V
DS
=0V
Gate-Source Threshold Voltage V
GS(th)
1.0 V I
D
=250 ␮A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1) R
DS(on)
0.11
0.15 ⍀
⍀
V
GS
=10V, I
D
=2.2A
V
GS
=4.5V, I
D
=1.1A
Forward Transconductance (1)(3) g
fs
1.1 S V
DS
=15V,I
D
=1.1A
DYNAMIC (3)
Input Capacitance C
iss
380 pF
V
DS
=25V, V
GS
=0V,
f=1MHz Output Capacitance C
oss
90 pF
Reverse Transfer Capacitance C
rss
30 pF
SWITCHING(2) (3)
Turn-On Delay Time t
d(on)
2.9 ns
V
DD
=15V, I
D
=2.2A
R
G
=6.0 ⍀ , V
GS
=10V
Rise Time t
r
5.6 ns
Turn-Off Delay Time t
d(off)
11.7 ns
Fall Time t
f
6.4 ns
Total Gate Charge Q
g
9.6 nC
V
DS
=24V,V
GS
=10V,
I
D
=2.2A
Gate-Source Charge Q
gs
1.7 nC
Gate-Drain Charge Q
gd
2.8 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
SD
0.95 V T
J
=25 ЊC, I
S
=2.2A,
V
GS
=0V
Reverse Recovery Time (3) t
rr
18.8 ns T
J
=25 ЊC, I
F
=2.2A,
di/dt= 100A/ ␮s
Reverse Recovery Charge (3) Q
rr
11.4 nC
ELECTRICAL CHARACTERISTICS (at T
A
= 25°C unless otherwise stated).
NOTES
(1) Measured under pulsed conditions. Width
=
300 ␮s. Duty cycle Յ 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.