Diodes ZXM62N03G - Manual (Page 2)

ZXM62N03G
ISSUE 1 - OCTOBER 2002
2
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DSS
30 V
Gate-Source Voltage V
GS
Ϯ20 V
Continuous Drain Current (V
GS
=10V; T
A
=25°C)(b)
(V
GS
=10V; T
A
=70°C)(b)
(V
GS
=10V; T
A
=25°C)(a)
I
D
4.7
3.8
3.4 A
Pulsed Drain Current (c) I
DM
16 A
Continuous Source Current (Body Diode) (b) I
S
2.6 A
Pulsed Source Current (Body Diode)(c) I
SM
16 A
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
P
D
2.0
16
W
mW/°C
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
P
D
3.9
31
W
mW/°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ABSOLUTE MAXIMUM RATING
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R θ JA
62.5 °C/W
Junction to Ambient (b) R θ JA
32 °C/W
THERMAL RESISTANCE
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t р10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.