Diodes ZXM61N03F - Manual (Page 4)

ELECTRICAL CHARACTERISTICS (at T A = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP.(3) MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V
(BR)DSS
30 V I
D
=250
µ
A, V
GS
=0V
Zero Gate Voltage Drain Current I
DSS
1 µ A V
DS
=30V, V
GS
=0V
Gate-Body Leakage I
GSS
100 nA V
G S
=
±
20V, V
DS
=0V
Gate-Source Threshold Voltage V
G S(th)
1.0 V I
D
=250
µ
A, V
DS
= V
GS
Static Drain-Source On-State Resistance
(1) R
DS(on)
0.22
0.30 Ω
Ω
V
G S
=10V, I
D
=0.91A
V
G S
=4.5V, I
D
=0.46A
Forward Transconductance (3) g
fs
0.87 S V
DS
=10V,I
D
=0.46A
DYNAMIC (3)
Input Capacitance C
iss
150 pF
V
DS
=25 V, V
GS
=0V,
f=1MHz Output Capacitance C
oss
35 pF
Reverse Transfer Capacitance C
rss
15 pF
SWITCHING(2) (3)
Turn-On Delay Time t
d(on)
1.9 ns
V
DD
=15V, I
D
=0.91A
R
G
=6.2 Ω , R
D
=16 Ω
(refer to test
circuit)
Rise Time t
r
2.5 ns
Turn-Off Delay Time t
d(off)
5.8 ns
Fall Time t
f
3.0 ns
Total Gate Charge Q
g
4.1 nC
V
DS
=24V,V
GS
=10V,
I
D
=0.91A
(refer to test
circuit)
Gate-Source Charge Q
gs
0.4 nC
Gate-Drain Charge Q
gd
0.63 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) V
SD
0.95 V T
J
=25°C, I
S
=0.91A,
V
G S
=0V
Reverse Recovery Time (3) t
rr
11.0 ns T
J
=25°C, I
F
=0.91A,
di/dt= 100A/
µ
s
Reverse Recovery Charge (3) Q
rr
3.5 nC
NOTES
(1) Measured under pulsed conditions. Width
≤
300
µ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
4
ZXM61N03F
ISSUE 1 - JUNE 2004