Diodes ZXM61N03F - Manual (Page 2)

ZXM61N03F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DSS
30 V
Gate Source Voltage V
GS
±
20 V
Continuous Drain Current (V
GS
=10V; T
A
=25°C)(b)
(V
GS
=10V; T
A
=70°C)(b)
I
D
1.4
1.1 A
Pulsed Drain Current (c) I
DM
7.3 A
Continuous Source Current (Body Diode) (b) I
S
0.8 A
Pulsed Source Current (Body Diode) I
SM
7.3 A
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
P
D
625
5
mW
mW/°C
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
P
D
806
6.4
mW
mW/°C
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) R θ JA
200 °C/W
Junction to Ambient (b) R θ JA
155 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t р5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
2
ISSUE 1 - JUNE 2004